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GL5551 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The GL5551 is designer for general purpose applications requiring high breakdown voltages.

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Datasheet Details

Part number GL5551
Manufacturer GTM CORPORATION
File Size 172.94 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GL5551 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1/2 GL5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The GL5551 is designer for general purpose applications requiring high breakdown voltages. Package Dimensions Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage Collector to Emitter Voltage VCBO VCEO Emitter to Base Voltage VEBO Collector Current IC Total Power Dissipation PD REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0̓ 10̓ 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13̓TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Ratings Unit +150 ć -55 ~ +150 ć 180 V 160 V 6 V 600 mA 1.