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G2309 Datasheet PDF

GTM G2309

The G2309 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2309 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Part No. G2309
Datasheet G2309 Download
Manufacturer
GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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G2309 datasheet page 1 preview

DESCRIPTION

FEATURES

*Simple Drive Requirement *Small Package Outline Package Dimensions TPU.34)QBDLBHF*

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor Symbol VDS VGS ID @Ta=25к ID @Ta=70к IDM PD @Ta=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Ratings -30 f20 -3.7 -3.0 12 1.38 -55 ~ +150 0.01 Ratings 90 Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 - 0.85 1.15 0̓ 10̓ Unit V V A A A W ć W/ć Unit ć/W 1/4 ISSUED DATE :2005/01/17 REVISED DATE :

ELECTRICAL CHARACTERISTICS

(Tj = 25ć Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 Breakdown Voltage Temperature Co...
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