The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
G2309-VB
G2309-VB Datasheet
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
0.046 at VGS = - 10 V
- 30
0.049 at VGS = - 6 V
0.054 at VGS = - 4.5 V
ID (A)a - 5.6 -5 -4.5
Qg (Typ.) 11.4 nC
(SOT-23)
S
TO-236
FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS • For Mobile Computing
- Load Switch - Notebook Adaptor Switch - DC/DC Converter
G1 S2
3D
Top View
G
D P-Channel MOSFET
www.VBsemi.com
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
VDS
VGS
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
- 30
± 20 - 5.6 - 5.1 - 5.4b,c - 4.
G2309 Datasheet
