GDMBD4148 Datasheet | GTM

Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 7 5 V, C U R R E N T 0 . 2 A The GDMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Maximum Peak Reverse Voltage Maximum Reverse Voltage Average Forward Current Surge Current(1us) Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note2) Total Power Dissipation Symbol Tj Tstg VRM VR IO IFSM CJ TRR PD Ratings +150 -65 ~ +150 100 75 200 2 4.0 4.0 225 V V m A A p F n Sec m W Unit Electrical Characteristics at Ta = 25 Characteristic Forward Voltage Reverse Breakdown Reverse Current Symbol VF VR IR Min. 100 Max. 1 5 Unit V V u A IF=10m A IR=100u A VR=75V . Test Conditions Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt. 2. Measured at applied forward current of 10m A, reverse current of 1.0m A, Reverse voltage of 6.0volt and RL=100 3. ESD sensitive product handling required. 1/2 .. ISSUED DATE :2004/12/13 REVISED DATE : Characteristics Curve 5- 5 50 100 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL :...