GE630 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 200 30 9 5.7 36 74 0.59 240 9 7 -55 ~ +150 Unit V V A A A W W/ m J A m J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.7 62 Unit /W /W Page: 1/5 ISSUED DATE :2005/06/24 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 200 2.0 Typ. 0.248 40 25 3.6 14 8 26 34 22 515 90 40 Max. 4.0 100 10 100 400 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=1m A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=5A VGS= 30V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=200V, VGS=0 VDS=160V, VGS=0 VGS=10V, ID=5A ID=9A VDS=160V VGS=10V VDS=100V ID=9A VGS=10V RG=10 RD=11 VGS=0V VDS=25V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter Forward On...