GE6679 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -30 25 -75 -50 -300 89 0.71 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 1.4 62 Unit /W /W Page: 1/4 ISSUED DATE :2005/06/28 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -30 -1.0 Typ. -0.03 34 42 6 25 11 35 58 78 2870 960 740 Max. -3.0 100 -1 -25 9 15 67 4590 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-24A VGS= 25V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-30A VGS=-4.5V, ID=-24A ID=-16A VDS=-24V VGS=-4.5V VDS=-15V ID=-16A VGS=-10V RG=3.3 RD=0.94 VGS=0V VDS=-25V f=1.0MHz Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 2 Symbol VSD Trr Qrr Min. - Typ. 47...