GE90N03 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 20 85 55 360 125 1 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.0 62 Unit /W /W Page: 1/5 ISSUED DATE :2005/06/24 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 1.0 Typ. 0.035 90 3.2 4.5 100 10.5 60 14 115 95 180 3830 1900 850 Max. 3.0 100 1 25 4 5 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=43A VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=43A VGS=4.5V, ID=34A ID=43A VDS=24V VGS=5V VDS=15V ID=43A VGS=10V RG=3.3 RD=0.35 VGS=0V VDS=25V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage Symbol VSD IS ISM Min. - Typ. - Max. 1.3 85...