GE90T03
GE90T03 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GE90T03 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Features
- Simple Drive Requirement
- Lower On-resistance
- Fast Switching Characteristic
Package Dimensions
REF.
A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25
2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current, VGS@4.5V
VGS ID @TC=25к
Continuous Drain Current, VGS@4.5V Pulsed Drain Current1 Total Power Dissipation
ID @TC=100к IDM
PD @TC=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings 30 f20 75 63 350 96 0.7
-55 ~ +150
Unit V V A A A W
W/ć ć
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Max. Max.
Symbol Rthj-c Rthj-a
Value 1.3 62
Unit ć/W ć/W
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ISSUED DATE :2005/03/01 REVISED DATE :2005/12/01B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max....