Datasheet4U Logo Datasheet4U.com

GI9980 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 80 25 21.3 13.4 80 41.7 0.33 -55 ~ +.

📥 Download Datasheet

Datasheet preview – GI9980

Datasheet Details

Part number GI9980
Manufacturer GTM
File Size 320.87 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI9980 Datasheet
Additional preview pages of the GI9980 datasheet.

📁 Similar Datasheet

  • GI910 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI911 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI912 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI914 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI916 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI917 - (GI910 - GI917) Medium Switching Plastic Rectifier (Vishay Siliconix)
  • GI965 - NPN EPITAXIAL PLANAR TRANSISTOR (GTM CORPORATION)
Other Datasheets by GTM
  • GI9912 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9915 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9916 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9960 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9962 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9971 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI9973 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GI90T03 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/09/26 REVISED DATE : GI9980 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 45m 21.3A The GI9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Single Drive Requirement *Fast Switching Performance Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.
Published: |