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GI9T18 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Capable of 2.5V gate drive Low Gate Charge

Features

  • Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 20 ±12 38 24 140 31.3 0.25 -55 ~ +.

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Datasheet Details

Part number GI9T18
Manufacturer GTM
File Size 262.04 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GI9T18 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/06 REVISED DATE : GI9T 18 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 14m 38A The GI9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Capable of 2.5V gate drive *Low Gate Charge Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.
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