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GISD1802 - PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Description

The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.

Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity and wide ASO.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (Ta = 25ะบ, unless otherwise specified) Parameter Symbol Ratings Unit Juncti.

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Datasheet Details

Part number GISD1802
Manufacturer GTM
File Size 569.43 KB
Description PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet GISD1802 Datasheet

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www.DataSheet4U.com ISSUED DATE :2005/01/13 REVISED DATE : GISD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Description The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. Features *Adoption of FBET, MBIT processes *Large current capacity and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.
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