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GISD1803 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Description

The GISD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.

Features

  • Low collector-to-emitter saturation voltage.
  • High current and high fT.
  • Excellent linearity of hFE.
  • Fast switching time Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (Ta = 25ะบ, unless otherwise specified) Parameter Symbol Ratings Unit Junction Temperature T.

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Datasheet Details

Part number GISD1803
Manufacturer GTM
File Size 298.93 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet GISD1803 Datasheet

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www.DataSheet4U.com ISSUED DATE :2005/01/13 REVISED DATE : GISD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Description The GISD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features *Low collector-to-emitter saturation voltage. *High current and high fT *Excellent linearity of hFE *Fast switching time Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.
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