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GJ1182 - PNP SILICON EPITAXIAL PLANAR TRANSISTOR

General Description

The GJ1182 is designed for medium power amplifier applications.

Key Features

  • Low collector saturation voltage : VCE(sat)=-0.5V(Typ. ) Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Ratings Unit Junction Temperature Tj +150 к Storage Temperature Tstg -55~+150 к Collector to Base.

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Datasheet Details

Part number GJ1182
Manufacturer GTM
File Size 304.87 KB
Description PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GJ1182 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com CORPORATION ISSUED DATE :2005/10/06 REVISED DATE : GJ1182 PNP SILICON EPITAXIAL PLANAR TRANSISTOR Description The GJ1182 is designed for medium power amplifier applications. Features ԦLow collector saturation voltage : VCE(sat)=-0.5V(Typ.) Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.