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GJ1386 - PNP EPITAXIAL SILICON TRANSISTOR

General Description

The GJ1386 is designed for low frequency applications.

Key Features

  • Low VCE(sat) =-0.55V(Typ. ) (IC/IB=-4A/-0.1A).
  • Excellent DC current gain characteristics Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC.
  • Collector Current (Pulse) IC Total Power Dissipation (TC=25к) PD REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.

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Datasheet Details

Part number GJ1386
Manufacturer GTM
File Size 185.63 KB
Description PNP EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet GJ1386 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2005/07/25 REVISED DATE : GJ1386 PNP EPITAXIAL SILICON TRANSISTOR Description The GJ1386 is designed for low frequency applications. Features ԦLow VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) ԦExcellent DC current gain characteristics Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC *Collector Current (Pulse) IC Total Power Dissipation (TC=25к) PD REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.