GJ1386 Overview
The GJ1386 is designed for low frequency applications.
GJ1386 Key Features
- Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) -Excellent DC current gain characteristics
| Part number | GJ1386 |
|---|---|
| Datasheet | GJ1386_GTM.pdf |
| File Size | 185.63 KB |
| Manufacturer | GTM |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
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The GJ1386 is designed for low frequency applications.
| Part Number | Description |
|---|---|
| GJ1060 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GJ1084 | 5A Low Dropout Positive Adjustable |
| GJ1085 | 3A Low Dropout Positive Adjustable |
| GJ1086 | 1.5A Low Dropout Positive Adjustable |
| GJ1116 | 0.6A Low Dropout Positive Adjustable |
| GJ1117A | 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator |
| GJ1118 | 0.8A Low Dropout Positive Adjustable |
| GJ1182 | PNP SILICON EPITAXIAL PLANAR TRANSISTOR |
| GJ1202 | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| GJ122 | NPN EPITAXIAL PLANAR TRANSISTOR |