Datasheet Summary
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ISSUED DATE :2005/07/25 REVISED DATE :
PNP EPITAXIAL SILICON TRANSISTOR
Description
The GJ1386 is designed for low frequency applications.
Features
- Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A)
- Excellent DC current gain characteristics
Package Dimensions
TO-252...