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GJ1952 - PNP HIGH SPEED SWITCHING TRANSISTOR

Datasheet Summary

Description

The GJ1952 is designed for high speed switching applications.

Features

  • Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A.
  • High speed switching, typically tf =0.15 s at IC=-3A.
  • Wide SOA.
  • Complements to GJ5103 Package Dimensions TO-252 Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current (DC) IC Collector Current (Pulse) IC Total Device Dissipation (TA=25к) PD Total Device Dissipation (TC=25к) PD Junctio.

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Datasheet Details

Part number GJ1952
Manufacturer GTM
File Size 379.40 KB
Description PNP HIGH SPEED SWITCHING TRANSISTOR
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Full PDF Text Transcription

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ISSUED DATE :2005/10/03 REVISED DATE : GJ1952 PNP HIGH SPEED SWITCHING TRANSISTOR Description The GJ1952 is designed for high speed switching applications. Features ԦLow saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A ԦHigh speed switching, typically tf =0.15 s at IC=-3A ԦWide SOA ԦComplements to GJ5103 Package Dimensions TO-252 Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current (DC) IC Collector Current (Pulse) IC Total Device Dissipation (TA=25к) PD Total Device Dissipation (TC=25к) PD Junction Temperature TJ Storage Temperature Tstg REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF.
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