GJ1952
GJ1952 is PNP HIGH SPEED SWITCHING TRANSISTOR manufactured by GTM.
Description
The GJ1952 is designed for high speed switching applications.
Features
- Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A
- High speed switching, typically tf =0.15 s at IC=-3A
- Wide SOA
- plements to GJ5103
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
Collector Current (Pulse)
Total Device Dissipation (TA=25к)
Total Device Dissipation (TC=25к)
Junction Temperature
Storage Temperature
Tstg
REF.
A B C D E F S
Millimeter
Min.
Max....
