GJ1952 Overview
The GJ1952 is designed for high speed switching applications.
GJ1952 Key Features
- Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A -High speed switching, typically tf =0.15 s at IC=
| Part number | GJ1952 |
|---|---|
| Datasheet | GJ1952_GTM.pdf |
| File Size | 379.40 KB |
| Manufacturer | GTM |
| Description | PNP HIGH SPEED SWITCHING TRANSISTOR |
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The GJ1952 is designed for high speed switching applications.
| Part Number | Description |
|---|---|
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| GJ1116 | 0.6A Low Dropout Positive Adjustable |
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| GJ1118 | 0.8A Low Dropout Positive Adjustable |
| GJ1182 | PNP SILICON EPITAXIAL PLANAR TRANSISTOR |
| GJ1202 | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| GJ122 | NPN EPITAXIAL PLANAR TRANSISTOR |