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GJ405 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Features

  • Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -30 ±20 -18 -14 -40 60.

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Datasheet Details

Part number GJ405
Manufacturer GTM
File Size 280.11 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GJ405 Datasheet
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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : GJ405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 32m -18A The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for high current load applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
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