GJ405
GJ405 is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
Ratings -30 ±20 -18 -14 -40 60 0.4 61 -35 -55 ~ +175
Unit V V A A A W W/ m J A
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy
EAS IAS Tj, Tstg
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 50 Unit /W /W
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ISSUED DATE :2006/12/06 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) unless otherwise specified)
Min. -30 -1.2 Typ. 17 18.7 2.54 5.4 9 25 20 12 920 190 122 Max. -2.4 ±100 -1 -5 32 60 23 13 1100 p F ns n C Unit V V S n A u A u A m Test Conditions VGS=0, ID=-250u A VDS=VGS, ID=-250u A VDS=-5V, ID=-18A VGS= ±20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A ID=-18A VDS=-15V VGS=-10V VDS=-15V VGS=-10V RG=3 RL=0.82 VGS=0V VDS=-15V f=1.0MHz
Symbol BVDSS VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance3 Total Gate Charge3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Source-Drain Diode
Parameter Forward On Voltage3
Continuous Source Current (Body Diode)
Symbol VSD IS Trr...