GJ41C Datasheet | GTM

Description Features NP N EP ITAXI AL PL ANAR T RANSI STOR The GJ41C is designed for use in general purpose amplifier and switching applications. - plementary to GJ42C Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Junction Temperature Storage Temperature Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO 100 VCEO 100 VEBO 5 IC 6 IC 10 Tj +150 Ts TG -55 ~ +150 PD 2 20 PD(TC=25 ) ) Unit Test Conditions Unit V V V A A W W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCEO BVEBO ICES ICEO IEBO - VCE(sat) - VBE(on) - h FE1 - h FE2 f T 100 100 5 30 15 3 - 10 50 500 1.5 2.0 75 - V V V u A u A u A V V MHz IC=1m A, IE=0 IC=30m A, IB=0 IE=1m A, IC=0 VCE=100V, VEB=0V VCE=60V, IB=0 VEB=5V, IC=0 IC =6A, IB=600m A VCE=4V, IC=6A VCE=4V, IC=300m A VCE=4V, IC=3A VCE=10V, IC=500m A, f=1MHz - Pulse Test: Pulse Width 380 s, Duty Cycle 2% Page: 1/2 ISSUED DATE :2005/05/12 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin...