GJ5706 Datasheet | GTM

Description Features NPN EPITAXIAL PLANAR SILICON TRANSISTOR The GJ5706 is designed high current switching applications. - Large current capacitance - Low collector-to-emitter saturation voltage - High-speed switching - High allowable power dissipation Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Junction Temperature Storage Temperature Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO 80 VCES 80 VCEO 50 VEBO 6 IC 5 ICP 7.5 IB 1.2 Tj +150 Ts TG -55 ~ +150 PD 0.8 15 PD(TC=25 ) ) Unit Test Conditions Unit V V V V A A A W W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCES BVCEO BVEBO ICBO IEBO - VCE(sat)1 - VCE(sat)2 - VBE(sat) - h FE f T Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) 80 80 50 6 200 - 400 15 35 300 20 1 1 135 240 1.2 560 - V V V V u A u A m V m V V MHz p F ns ns ns IC=10u A, IE=0 IC=100u A, RBE=0 IC=1m A, RBE= IE=10u A, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 l C=1A, IB=50m A l C=2A, IB=100m A l C=2A, IB=100m A VCE=2V, IC=500m A VCE=10V, IC=500m A VCB=10V, f=1MHz See specified test circuit. See specified test circuit. See specified test circuit. Page: 1/3 ISSUED DATE :2005/05/06 REVISED DATE : Switching Time Test Circuit Characteristics Curve Page: 2/3 ISSUED DATE :2005/05/06 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications,...