GM9452
GM9452 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GM9452 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Simple Drive Requirement
- Low Gate Charge
- Capable of 2.5V Gate Drive
Features
Package Dimensions SOT-89
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 20 16 4 2.5 12 1.25 0.01 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rthj-a
Value 100
Unit /W
Page: 1/4
Free Datasheet http://../
ISSUED DATE :2005/09/14 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 20 0.7 Typ. 0.03 10 6 1 2 8 9 13 3 360 80 65 Max. 1.5 100 1 25 38 50 10 570 p F ns nc Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=5V, ID=3A VGS= 16V
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance
VGS(th) gfs IGSS IDSS
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70...
