GM965 Datasheet | GTM

Description NPN EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/04/16 REVISED DATE :2004/12/08B The GM965 is designed for use as AF output amplifier and flash unit. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Symbol Tj Tstg Ratings +150 -55 ~ +150 Unit Absolute Maximum Ratings at Ta = 25 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10m S) Total Power Dissipation at Ta = 25 BVCBO BVCEO BVEBO IC IC PD 40 20 7.0 5 8 1.2 V V V A A W Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - h FE1 - h FE2 f T Cob at Ta = 25 Min. 40 20 7 230 150 Typ. 0.35 150 Max. 0.1 0.1 1 800 50 MHz p F Unit V V V u A u A V IC=100u A IC=1m A IE=10u A VCB=60V VEB=7V IC=3A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50m A VCB=20V, f=1MHz - Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of h FE1 Rank Range Q 230-380 R 340-600 S 560-800 Page: 1/2 Free Datasheet http://../ CORPORATION Characteristics Curve ISSUED DATE :2004/04/16 REVISED DATE :2004/12/08B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. ,...