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CORPORATION
GM965
Description
NPN EPITAXIAL PLANAR T RANSISTOR
ISSUED DATE :2004/04/16 REVISED DATE :2004/12/08B
The GM965 is designed for use as AF output amplifier and flash unit.
Package Dimensions SOT-89
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Junction Temperature Storage Temperature Symbol Tj Tstg Ratings +150 -55 ~ +150 Unit
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Total Power Dissipation at Ta = 25 BVCBO BVCEO BVEBO IC IC PD 40 20 7.0 5 8 1.