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GMBT8550 - PNP EPITAXIAL TRANSISTOR

General Description

The GMBT8550 is designed for general purpose amplifier applications.

Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to

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Datasheet Details

Part number GMBT8550
Manufacturer GTM
File Size 220.23 KB
Description PNP EPITAXIAL TRANSISTOR
Datasheet download datasheet GMBT8550 Datasheet

Full PDF Text Transcription for GMBT8550 (Reference)

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1/2 GMBT8550 PNP EPITAXIAL TRANSISTOR Description The GMBT8550 is designed for general purpose amplifier applications. Package Dimensions TPU.34)QBDLBHF* Absolute Maximum...

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fier applications. Package Dimensions TPU.34)QBDLBHF* Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Total Power Dissipation PD REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 - 0.85 1.15 0̓ 10̓ Ratings Unit +150 ć -55 ~ +150 ć -25 V -20 V -5 V -700 mA 225 mW Characteristics at Symbol BVCBO Min.

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