• Part: GMBT8550L
  • Description: PNP EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: GTM
  • Size: 253.90 KB
Download GMBT8550L Datasheet PDF
GTM
GMBT8550L
Description Package Dimensions P N P E P I TA X I A L T R A N S I S T O R The GMBT8550L(large current) is designed for general purpose amplifier applications. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter .. Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -40 -25 -6 1.5 250 Unit Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation V V V A m W Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) h FE h FE h FE f T Cob at Ta = 25 Min. -40 -25 -6 45 120 40 100 Typ. Max. -100 -100 -0.5 -1.2 -1 500 10 MHz p F Unit V V V n A n A V V V IC=-100u A IC=-2m A IE=-100u A VCB=-35V, IE=0 VEB=-6V,IC=0 IC=-800m A, IB=-80m A IC=-800m A, IB=-80m A VCE=-1V,IC=-10m A VCE=-1V, IC=-5m A...