GP9962
GP9962 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GP9962 provides the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
- Low On-Resistance
- Single Drive Requirement
Features
Package Dimensions
GAUGE PLANE
REF. A A1 A2 b b1 b2 b3 c
Millimeter Min. Max.
0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356
REF. c1 D E E1 e HE L
Millimeter Min. Max.
0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810
SEATING PLANE Z Z b
SECTION Z
- Z b e
DIP-8
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ,VGS@10V Continuous Drain Current ,VGS@10V Pulsed Drain Current
1,2 3 3 c
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 40 20 7 5.5 20 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rthj-a
Value 62.5
Unit /W
1/4
..
ISSUED DATE :2005/08/08 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown...
