• Part: GP9973
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM
  • Size: 367.42 KB
Download GP9973 Datasheet PDF
GTM
GP9973
GP9973 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description Features Package Dimensions GAUGE PLANE REF. A A1 A2 b b1 b2 b3 c Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATING PLANE Z Z b SECTION Z - Z b e DIP-8 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1,2 3 3 c Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 60 20 3.9 2.5 20 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Symbol Max. Rthj-amb Value 62.5 Unit /W Page: 1/4 .. ISSUED DATE :2005/08/04 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 60 1.0 Typ. 0.06 3.5 8 2 4 8 4 20 6 700 80 50 Max. 3.0 100 1 25 80 100 13 1120 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=3.9A VGS=...