GP9973
GP9973 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
Features
Package Dimensions
GAUGE PLANE
REF. A A1 A2 b b1 b2 b3 c
Millimeter Min. Max.
0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356
REF. c1 D E E1 e HE L
Millimeter Min. Max.
0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810
SEATING PLANE Z Z b
SECTION Z
- Z b e
DIP-8
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current
1,2 3 3 c
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 60 20 3.9 2.5 20 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rthj-amb
Value 62.5
Unit /W
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ISSUED DATE :2005/08/04 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 60 1.0 Typ. 0.06 3.5 8 2 4 8 4 20 6 700 80 50 Max. 3.0 100 1 25 80 100 13 1120 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=3.9A VGS=...