GS7407 Datasheet | GTM

Pb Free Plating Product ISSUED DATE :2006/08/15 REVISED DATE : P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 135m -1.2A Description The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. This device is suitable for use as a load switch or in PWM application. The GS7407 is universally used for all mercial-industrial applications. Features - Lower Gate Charge - Small Package Outline - Ro HS pliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1 A2 D E HE Millimeter Min....