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GS7407 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.

This device is suitable for use as a load switch or in PWM application.

The GS7407 is universally used for all commercial-industrial applications.

Features

  • Lower Gate Charge.
  • Small Package Outline.
  • RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1 A2 D E.

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Datasheet preview – GS7407

Datasheet Details

Part number GS7407
Manufacturer GTM
File Size 273.64 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GS7407 Datasheet
Additional preview pages of the GS7407 datasheet.

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2006/08/15 REVISED DATE : GS7407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 135m -1.2A Description The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. This device is suitable for use as a load switch or in PWM application. The GS7407 is universally used for all commercial-industrial applications.
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