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GSBAS16 Datasheet PDF

GTM GSBAS16

The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
Part No. GSBAS16
Datasheet GSBAS16 Download
Manufacturer
GTM
Description SWITCHING DIODE
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GSBAS16 datasheet page 1 preview

DESCRIPTION

V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2006/12/12 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.

ABSOLUTE MAXIMUM RATINGS

at TA = 25 Parameter Junction Temperature Storage Temperature Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation Symbol Tj Tstg VR VRRM IO IFM IFSM PD Ratings +150 -65 ~ +150 85 85 250 500 1000 225 V V mA mA mA mW Unit

ELECTRICAL CHARACTERISTICS

(at TA = 25 Characteristic Reverse Breakdown Voltage Symbol V(BR) VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Total Capacitance Reverse Recovery Time IR CT Trr Min. 85 - unless otherwise noted) Max. 715 855 1000 1250 1 2 6 Unit V mV mV mV mV uA pF nS IR=100uA IF=1m...
GSBAS16 page 2 preview