GSBC817 Description
The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. A A1 A2 D E HE Millimeter Min. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF.
GSBC817 is NPN EPITAXIAL PLANAR TRANSISTOR manufactured by GTM.
| Part Number | Description |
|---|---|
| GSBC807 | PNP EPITAXIAL PLANAR TRANSISTOR |
| GSBC846 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GSBC847 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GSBC848 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GSBC856 | PNP EPITAXIAL PLANAR TRANSISTOR |
The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. A A1 A2 D E HE Millimeter Min. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF.