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GSBC817 Datasheet PDF

GTM GSBC817

The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Part No. GSBC817
Datasheet GSBC817 Download
Manufacturer
GTM
Description NPN EPITAXIAL PLANAR TRANSISTOR
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GSBC817 datasheet page 1 preview

DESCRIPTION

Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.

ABSOLUTE MAXIMUM RATINGS

at Ta = 25к Parameter Symbol Ratings Unit Junction Temperature Tj +150 ć Storage Temperature Tstg -55 ~ +150 ć Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current IC 800 mA Total Power Dissipation PD 225 mW Characteristics at Symbol BVCBO BVCEO BVCES BVEBO ICES IEBO Min. 50 45 50 5 - *VCE(sat) - *VBE(on) - *hFE 100 fT - Cob - Ta = 25к Typ. - 100 - Max. - 100 100 700 1.2 630 12 Classification Of hFE Rank Range 8FA 100 - 250 8FB 160 - 400 Unit V V V V nA nA mV V MHz pF Test Conditions IC=100uA IC=10mA IC=100uA IE=100uA VCE=25V VEB=4V IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=1V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2% 8FC 250 - 630 1/2 Characteristics Curve ISSUED DATE :2005/06/08 REVISED DATE : Important Notice: All rights are reserved.
GSBC817 page 2 preview