GSMBT5551 Overview
Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA) plementary to GSMBT5401 Package Dimensions REF. A A1 A2 D E HE Millimeter Min.