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ISSUED DATE :2005/08/31 REVISED DATE :
G S M B TA 6 4
Description Features
PNP SILICON TRANSISTOR
The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA. High D.C. Current Gain Complementary to GSMBTA14
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD ,unless otherwise noted) Max. -100 -100 -1.
GSMBTA64 Datasheet
