DESCRIPTION
FEATURES
PNP SILICON TRANSISTOR High D.C. Current Gain Complementary to GSMBTA14 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD ,unless otherwise noted) Max. -100 -100 -1.5 -2 MHz Unit V V V nA nA V V IC=-100uA, IE=0 IC=-100uA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-10V, IC=0 IC=-100mA, IB=-0.1mA VCE=-5V, IC=-100mA VCE=-5V, IC=-10mA VCE=-5V, IC=-100mA VCE=-5V, IC=-100mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Ratings +150 -55~+150 -30 -30 -10 -500 225 Unit V V V mA mW ELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VB...
GTM
