Datasheet Summary
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ISSUED DATE :2005/08/31 REVISED DATE :
G S M B TA 6 4
Description Features
PNP SILICON TRANSISTOR
The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA. High D.C. Current Gain plementary to GSMBTA14
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15...