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GSS6900S - Dual N-Channel MOSFET

Description

low on-resistance and cost-effectiveness.

Features

  • Simple Drive Requirement.
  • DC-DC Converter Suitable.
  • Fast Switching Performance Package Dimensions REF. A B C D E F Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambie.

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Datasheet preview – GSS6900S

Datasheet Details

Part number GSS6900S
Manufacturer GTM
File Size 557.58 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet GSS6900S Datasheet
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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : GSS6900S CH1 BVDSS 30V N-CH RDS(ON) 30m DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE N-CH ID CH2 BVDSS 5.7A 30V N-CH RDS(ON) 22m Description N-CH ID 9.8A The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *DC-DC Converter Suitable *Fast Switching Performance Package Dimensions REF.
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