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GSS6982 - POWER MOSFET

Description

CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A

Features

  • Low On-resistance.
  • Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings CH-1 CH-2 Unit V V A A.

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Datasheet Details

Part number GSS6982
Manufacturer GTM
File Size 508.19 KB
Description POWER MOSFET
Datasheet download datasheet GSS6982 Datasheet
Additional preview pages of the GSS6982 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : GSS6982 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Description CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A Features *Low On-resistance *Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
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