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GSS9922E - POWER MOSFET

Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 6.8 5.4 25 2 0.016 -55 ~ +150 Unit V.

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Datasheet preview – GSS9922E

Datasheet Details

Part number GSS9922E
Manufacturer GTM
File Size 289.12 KB
Description POWER MOSFET
Datasheet download datasheet GSS9922E Datasheet
Additional preview pages of the GSS9922E datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/06 REVISED DATE : GSS9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 20m 6.8A The GSS9922E provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.
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