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GSS9926 Datasheet POWER MOSFET

Manufacturer: GTM

Overview: www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/05/27 REVISED DATE :2006/11/15E GSS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m.

Datasheet Details

Part number GSS9926
Manufacturer GTM
File Size 332.46 KB
Description POWER MOSFET
Download GSS9926 Download (PDF)

General Description

The GSS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

*Low on-resistance *Capable of 2.5V gate drive *Low drive current

Key Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1 3 3 Symbol VDS VGS ID @Ta=.