GT2530
GT2530 is N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
..
Pb Free Plating Product
ISSUED DATE :2006/01/23 REVISED DATE :
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A
The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all mercial-industrial surface mount applications.
Features
- Low Gate Change
- Low On-resistance
- Ro HS pliant
Package Dimensions
REF. A B C D E F
Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10°
REF. G H I J K L
Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95...
