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GTT3585 - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GTT3585 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

Features

  • Low Gate Change.
  • Low On-resistance.
  • RoHS Compliant Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj.

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Datasheet preview – GTT3585

Datasheet Details

Part number GTT3585
Manufacturer GTM
File Size 451.03 KB
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTT3585 Datasheet
Additional preview pages of the GTT3585 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/23 REVISED DATE : GTT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description N-CH BVDSS 20V N-CH RDS(ON) 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A The GTT3585 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications. Features *Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
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