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GU15P10 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Fast Switching Characteristic.
  • RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resist.

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Datasheet Details

Part number GU15P10
Manufacturer GTM
File Size 269.26 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GU15P10 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GU15P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 210m -16A Description The GU15P10 (TO-263 package) is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.