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GU70L02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The GU70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Ju.

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Datasheet Details

Part number GU70L02
Manufacturer GTM
File Size 279.05 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GU70L02 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/02B GU70L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 9m 66A Description The GU70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.