GS-065-018-2-L Datasheet 650V E-mode GaN transistor

Manufacturer: GaN Systems

GS-065-018-2-L 650v e-mode gan transistor by GaN Systems - Datasheet Preview

Datasheet Details

Part number	GS-065-018-2-L
Manufacturer	GaN Systems
File Size	865.59 KB
Description	650V E-mode GaN transistor
Datasheet	GS-065-018-2-L Datasheet

General Description

The GS-065-018-2-L is a 650V enhancement mode GaNon-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.

Overview

GS-065-018-2-L 650 V E-mode GaN transistor Datasheet.

Key Features

650 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, 8x8 mm PDFN package.
RDS(on) = 78 mΩ.
IDSmax,DC = 18 A / IDsmax,Pulse = 35 A.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.
Zero reverse recovery l.

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