GS-065-018-2-L Datasheet | GaN Systems

Features - 650 V enhancement mode power transistor - 850 V transient drain-to-source voltage - Bottom-cooled, 8x8 mm PDFN package - RDS(on) = 78 mΩ - IDSmax,DC = 18 A / IDsmax,Pulse = 35 A - Simple gate drive requirements (0 V to 6 V) - Transient tolerant gate drive (-20 V / +10 V) - High switching frequency (> 1 MHz) - Fast and controllable fall and rise times - Reverse conduction capability - Zero reverse recovery loss - Source Sense (SS) pin for optimized gate drive - Ro HS 3 (6+4) pliant Top View Bottom View Applications - Consumer and Industrial Power Supplies - Power Adapters - LED Lighting Drivers - Fast Battery Charging - Power Factor Correction - Appliance and Industrial Motor Drives - Wireless Power Transfer Description The GS-065-018-2-L is a 650V enhancement mode Ga Non-Silicon power transistor. The properties of Ga N allow for high current, high voltage breakdown and high switching frequency. Ga N Systems innovates with industry leading advancements such as patented Island...