GS-065-018-2-L Datasheet (650V E-mode GaN transistor)

Part: GS-065-018-2-L
Manufacturer: GaN Systems
Size: 865.59 KB

GS-065-018-2-L Key Features

650 V enhancement mode power transistor
850 V transient drain-to-source voltage
Bottom-cooled, 8x8 mm PDFN package
RDS(on) = 78 mΩ
IDSmax,DC = 18 A / IDsmax,Pulse = 35 A
Simple gate drive requirements (0 V to 6 V)
Transient tolerant gate drive (-20 V / +10 V)
High switching frequency (> 1 MHz)
Fast and controllable fall and rise times
Reverse conduction capability

Related GaN Systems Datasheets

Part Number	Description
GS-065-018-6-LR	700 V E-mode GaN transistor
GS-065-011-1-L	650V E-mode GaN transistor
GS-065-011-2-L	650V E-mode GaN transistor
GS-065-011-6-L	700V E-mode GaN transistor
GS-065-011-6-LR	700V E-mode GaN transistor

GS-065-018-2-L Description

The GS-065-018-2-L is a 650V enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.