GS-065-018-6-LR Datasheet (700 V E-mode GaN transistor)

Part: GS-065-018-6-LR
Manufacturer: GaN Systems
Size: 874.36 KB

GS-065-018-6-LR Key Features

700 V enhancement mode power transistor
850 V transient drain-to-source voltage
Bottom-cooled, 8x8 mm PDFN package
RDS(on) = 62 mΩ
IDSmax,DC = 23 A / IDsmax,Pulse = 39 A
Simple gate drive requirements (0 V to 6 V)
Transient tolerant gate drive (-20 V / +10 V)
High switching frequency (> 1 MHz)
Fast and controllable fall and rise times
Reverse conduction capability

Related GaN Systems Datasheets

Part Number	Description
GS-065-018-2-L	650V E-mode GaN transistor
GS-065-011-1-L	650V E-mode GaN transistor
GS-065-011-2-L	650V E-mode GaN transistor
GS-065-011-6-L	700V E-mode GaN transistor
GS-065-011-6-LR	700V E-mode GaN transistor

GS-065-018-6-LR Description

Consumer and Industrial Power Supplies Power Adapters LED Lighting Drivers Fast Battery Charging Power Factor Correction Appliance and Industrial Motor Drives Wireless Power Transfer The GS-065-018-6-LR is a 700V enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements...