GS-065-018-6-LR Overview
Consumer and Industrial Power Supplies Power Adapters LED Lighting Drivers Fast Battery Charging Power Factor Correction Appliance and Industrial Motor Drives Wireless Power Transfer The GS-065-018-6-LR is a 700V enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements...
GS-065-018-6-LR Key Features
- 700 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, 8x8 mm PDFN package
- RDS(on) = 62 mΩ
- IDSmax,DC = 23 A / IDsmax,Pulse = 39 A
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability