GS-065-018-6-LR Datasheet PDF - GaN Systems 700 V E-mode GaN transistor Specs

GS-065-018-6-LR - 700 V E-mode GaN transistor

Datasheet Summary

Description

Consumer and Industrial Power Supplies Power Adapters LED Lighting Drivers Fast Battery Charging Power Factor Correction Appliance and Industrial Motor Drives Wireless Power Transfer The GS-065-018-6-LR is a 700V enhancement mod

Features

700 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, 8x8 mm PDFN package.
RDS(on) = 62 mΩ.
IDSmax,DC = 23 A / IDsmax,Pulse = 39 A.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.
Zero reverse recovery l.

Datasheet Details

Part number	GS-065-018-6-LR
Manufacturer	GaN Systems
File Size	874.36 KB
Description	700 V E-mode GaN transistor
Datasheet	GS-065-018-6-LR Datasheet
Additional preview pages of the GS-065-018-6-LR datasheet.

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Full PDF Text Transcription

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 62 mΩ • IDSmax,DC = 23 A / IDsmax,Pulse = 39 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant GS-065-018-6-LR 700 V E-mode GaN transistor Datasheet Top View Bottom View Applications Description • Consumer and Industrial Power Supplies • Power Adapters • LED Lighting Drivers • Fast Battery Charging • Power Factor Correction • Appliance and Industrial Motor Drives • Wireless Power Transfer

Published: Jul 20, 2025 |