GS-065-018-6-LR - 700 V E-mode GaN transistor

Product Overview

GaN Systems

Datasheet Details

Part number	GS-065-018-6-LR
Manufacturer	GaN Systems
File Size	874.36 KB
Description	700 V E-mode GaN transistor
Datasheet	GS-065-018-6-LR Datasheet
Additional preview pages of the GS-065-018-6-LR datasheet.

Product details

Description

Consumer and Industrial Power Supplies Power Adapters LED Lighting Drivers Fast Battery Charging Power Factor Correction Appliance and Industrial Motor Drives Wireless Power Transfer The GS-065-018-6-LR is a 700V enhancement mode GaNon-Silicon power transistor.The properties of GaN allow for high current, high voltage breakdown and high switching frequency.GaN Systems innovates with industry leading advancements such as pa

Features

700 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, 8x8 mm PDFN package.
RDS(on) = 62 mΩ.
IDSmax,DC = 23 A / IDsmax,Pulse = 39 A.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.
Zero reverse recovery l.

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Published: Jul 20, 2025 |