GS-065-060-5-B-A Overview
The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.
GS-065-060-5-B-A Key Features
- AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
- 650 V enhancement mode power transistor
- Bottom-cooled, low inductance GaNPX® package
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times