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GS-065-060-5-B-A Datasheet Automotive 650V GaN E-mode transistor

Manufacturer: GaN Systems

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Datasheet Details

Part number GS-065-060-5-B-A
Manufacturer GaN Systems
File Size 1.24 MB
Description Automotive 650V GaN E-mode transistor
Datasheet download datasheet GS-065-060-5-B-A Datasheet

General Description

The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

GS-065-060-5-B-A Automotive 650 V GaN E-mode transistor Datasheet.

Key Features

  • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101).
  • 650 V enhancement mode power transistor.
  • Bottom-cooled, low inductance GaNPX® package.
  • RDS(on) = 25 mΩ.
  • IDS(max) = 60 A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Zero.

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