GS-065-060-5-B-A
Features
- AEC-Q101 and Auto Qual+™ (Enhanced-AEC-Q101)
- 650 V enhancement mode power transistor
- Bottom-cooled, low inductance Ga NPX® package
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 11 x 9 mm2 PCB footprint
- Dual gate pads for optimal board layout
- Ro HS 3 (6+4) pliant
Package Outline top view
Circuit Symbol
The thermal pad is internally connected to Source (pad 2) and substrate
Applications
- On Board Chargers
- Traction Drive
- DC-DC Converters
- Industrial Motor Drives
- Solar Inverters
- Bridgeless Totem Pole PFC
Description
The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode Ga N-on-Silicon power transistor. The properties of Ga N allow for high current, high voltage breakdown and high switching...
