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GS-065-060-5-T-A - Automotive 650V GaN E-mode transistor

Description

The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

  • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101).
  • 650 V enhancement mode power transistor.
  • Top-cooled, low inductance GaNPX® package.
  • RDS(on) = 25 mΩ.
  • IDS(max) = 60 A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Zero re.

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Datasheet preview – GS-065-060-5-T-A

Datasheet Details

Part number GS-065-060-5-T-A
Manufacturer GaN Systems
File Size 1.01 MB
Description Automotive 650V GaN E-mode transistor
Datasheet download datasheet GS-065-060-5-T-A Datasheet
Additional preview pages of the GS-065-060-5-T-A datasheet.

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Full PDF Text Transcription

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GS-065-060-5-T-A Automotive 650 V GaN E-mode transistor Datasheet Features • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Small 9 x 7.6 mm2 PCB footprint • Dual gate pads for optimal board layout • RoHS 3 (6+4) compliant Package Outline top view Circuit Symbol The thermal pad is internally connected to Source (pin 3) and substrate.
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