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TBL900P04 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Advanced Trench technology.
  • Excellent RDS(ON) and low gate charge.
  • Halogen free.
  • Qualified to AEC-Q101 standards for high reliability Mechanical Data.
  • Case: SOT-23.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-23 Ordering Information Part Number TBL900P04 Package SOT-23 Shipping Quantity 3000 pcs / Tape & Reel Marking Code 900P04 Maximum Ratings (@ TA = 2.

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Datasheet Details

Part number TBL900P04
Manufacturer Galaxy Microelectronics
File Size 641.12 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TBL900P04 Datasheet
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Full PDF Text Transcription

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P-Channel Enhancement Mode MOSFET TBL900P04 Features  Advanced Trench technology  Excellent RDS(ON) and low gate charge  Halogen free  Qualified to AEC-Q101 standards for high reliability Mechanical Data  Case: SOT-23  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-23 Ordering Information Part Number TBL900P04 Package SOT-23 Shipping Quantity 3000 pcs / Tape & Reel Marking Code 900P04 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) *1 Continuous Drain Current (TA = 100°C) *1 Pulsed Drain Current (tp = 10μs) Symbol VDSS VGSS ID IDM Value -40 ±20 -2.8 -1.
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