TBL900P06D Datasheet | Galaxy Microelectronics

P-Channel Enhancement Mode MOSFET TBL900P06D Features - Super low gate charge - Excellent CdV/dt effect decline - Advanced high cell density Trench technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: TO-252 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL900P06D Package TO-252 Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code 900P06D Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current...