The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P-Channel Enhancement Mode MOSFET TBL900P06D
Features
Super low gate charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen free Qualified to AEC-Q101 standards for high reliability
Mechanical Data
Case: TO-252 Molding Compound: UL Flammability Classification Rating 94V-0 Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
TO-252
Ordering Information
Part Number TBL900P06D
Package TO-252
Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel
Marking Code 900P06D
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current
Symbol VDSS VGSS ID IDM
Value -60 ±20 -18 -64
Unit V V A A
Thermal Characterist
TBL900P06D Datasheet
