TBL900P06D Description
P-Channel Enhancement Mode MOSFET TBL900P06D.
TBL900P06D Key Features
- Super low gate charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- Halogen free
- Qualified to AEC-Q101 standards for high reliability
- Case: TO-252
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
- 55 ~ +150 -55 ~ +150
- ±100 nA