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TGBLN6601-5DL8 - Dual N-Channel Enhancement Mode MOSFET

Features

  • Super low gate charge.
  • Green device available.
  • Excellent CdV / dt effect decline.
  • Advanced high cell density trench technology.
  • Halogen free.
  • Qualified to AEC-Q101 standards for high reliability Mechanical Data.
  • Case: PDFN5×6-8LC.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8LC Ordering Information Part Number TGBLN6601-5DL8 Package PDFN5×6-8L.

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    Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8 Features  Super low gate charge  Green device available  Excellent CdV / dt effect decline  Advanced high cell density trench technology  Halogen free  Qualified to AEC-Q101 standards for high reliability Mechanical Data  Case: PDFN5×6-8LC  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8LC Ordering Information Part Number TGBLN6601-5DL8 Package PDFN5×6-8LC Shipping Quantity 5000 pcs / Tape & Reel Marking Code GBLN6601 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) *1 Continuous Drain Current (TC = 100°C) *1 Pulsed Dr
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