TGBLN6601-5DL8 Datasheet Dual N-channel Enhancement Mode MOSFET

Manufacturer: Galaxy Microelectronics

Overview: Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8.

Datasheet Details

Part number	TGBLN6601-5DL8
Manufacturer	Galaxy Microelectronics
File Size	523.88 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	TGBLN6601-5DL8-GalaxyMicroelectronics.pdf

Key Features

Super low gate charge.
Green device available.
Excellent CdV / dt effect decline.
Advanced high cell density trench technology.
Halogen free.
Qualified to AEC-Q101 standards for high reliability Mechanical Data.
Case: PDFN5×6-8LC.
Molding Compound: UL Flammability Classification Rating 94V-0.
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8LC Ordering Information Part Number TGBLN6601-5DL8 Package PDFN5×6-8L.

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