TGBLN6601-5DL8
TGBLN6601-5DL8 is Dual N-Channel Enhancement Mode MOSFET manufactured by Galaxy Microelectronics.
Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8
Features
- Super low gate charge
- Green device available
- Excellent CdV / dt effect decline
- Advanced high cell density trench technology
- Halogen free
- Qualified to AEC-Q101 standards for high reliability
Mechanical Data
- Case: PDFN5×6-8LC
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,
Method 208
PDFN5×6-8LC
Ordering Information
Part Number TGBLN6601-5DL8
Package PDFN5×6-8LC
Shipping Quantity 5000 pcs / Tape & Reel
Marking Code GBLN6601
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Drain-to-Source Voltage...
