TGBLN6601-5DL8 Description
Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8.
TGBLN6601-5DL8 Key Features
- Super low gate charge
- Green device available
- Excellent CdV / dt effect decline
- Advanced high cell density trench technology
- Halogen free
- Qualified to AEC-Q101 standards for high reliability
- Case: PDFN5×6-8LC
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202
- 55 ~ +175 -55 ~ +175