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1N5830 - Silicon Power Schottky Diode

Download the 1N5830 datasheet PDF. This datasheet also covers the 1N5829 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types up to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cur.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5829-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N5830
Manufacturer GeneSiC
File Size 840.54 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N5830 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N5830R Silicon Power Schottky Diode
1N5831 Silicon Power Schottky Diode
1N5831R Silicon Power Schottky Diode
1N5832 Silicon Power Schottky Diode
1N5832R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types up to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.