1N5830 Datasheet | Naina Semiconductor

Features - - - - - Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5829 thru 1N5831R DO-203AA (DO-4) Maximum Ratings (TJ = 25o C, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25o C tp = 8.3 ms IF = 25 A TJ = 25o C VR = 20V, TJ = 25o C VR = 20V, TJ = 125o C o Test Conditions Symbol VRRM VRMS VDC IF IFSM http://..net/ 1N5829(R) 20 14 20 25 800 0.58 2 250 1N5830(R) 25 17 25 25 800 0.58 2 250 1N5831(R) 35 25 35 25 800 0.58 2 250 Units V V V A A V m A VF IR Thermal & Mechanical Specifications (TJ = 25o C, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg F W 1N5829(R) 1N5830(R) 1.8 -55 to 150 -55 to 175 2.0 5.0 1N5831(R) Units o C/W o C o C Nm g D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 - Fax: 0120-4273653 sales@nainasemi. - .nainasemi. datasheet pdf - http://..net/ Naina Semiconductor Ltd. Package Outline 1N5829 thru 1N5831R http://..net/ ALL DIMENSIONS IN MM D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 - Fax: 0120-4273653 sales@nainasemi. - .nainasemi. datasheet pdf -...