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1N5830R - Silicon Power Schottky Diode

This page provides the datasheet information for the 1N5830R, a member of the 1N5829 Silicon Power Schottky Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types up to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cur.

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Datasheet preview – 1N5830R

Datasheet Details

Part number 1N5830R
Manufacturer GeneSiC
File Size 840.54 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N5830R Datasheet
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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types up to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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