1N8024-GA Description
1N8024-GA High Temperature Silicon Carbide Power Schottky Diode.
1N8024-GA Key Features
- 1200 V Schottky rectifier
- 250°C maximum operating temperature
- Electrically isolated base-plate
- Zero reverse recovery charge
- Superior surge current capability
- Positive temperature coefficient of VF
- Temperature independent switching behavior
- Lowest figure of merit QC/IF
- Available screened to Mil-PRF-19500
- RoHS pliant