1N8024-GA - High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Key Features

1200 V Schottky rectifier.
250°C maximum operating temperature.
Electrically isolated base-plate.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Package.
RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.5 A QC = 6 nC PIN 1 PIN 2 PIN 3 NC 123 TO.
257 (Isolated Base-pl.

1N8024-GA high temperature silicon carbide power schottky diode by GeneSiC - Datasheet Preview

Datasheet Details

Part number	1N8024-GA
Manufacturer	GeneSiC
File Size	765.75 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	1N8024-GA Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
1N8020	HYPER FAST SOFT RECOVERY RECTIFIER	SSDI
1N8021	HYPER FAST RECOVERY RECTIFIER	SSDI
1N8022	HYPER FAST RECOVERY RECTIFIER	SSDI
1N8023	HYPER FAST RECOVERY RECTIFIER	SSDI
1N80	N-CHANNEL POWER MOSFET	UTC

Other Datasheets by GeneSiC

Part Number	Description
1N8033-GA	High Temperature Silicon Carbide Power Schottky Diode
1N8034-GA	High Temperature Silicon Carbide Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1N8024-GA High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  250°C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.