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1N8033-GA Datasheet High Temperature Silicon Carbide Power Schottky Diode

Manufacturer: GeneSiC

Overview: 1N8033-GA High Temperature Silicon Carbide Power Schottky Diode.

Datasheet Details

Part number 1N8033-GA
Manufacturer GeneSiC
File Size 706.12 KB
Description High Temperature Silicon Carbide Power Schottky Diode
Datasheet 1N8033-GA-GeneSiC.pdf

Key Features

  • 650 V Schottky rectifier.
  • 250 °C maximum operating temperature.
  • Zero reverse recovery charge.
  • Superior surge current capability.
  • Positive temperature coefficient of VF.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF.
  • Available screened to Mil-PRF-19500 Package.
  • RoHS Compliant 3 1 VRRM IF (Tc=25°C) QC = 650 V = 14 A = 20 nC PIN 1 PIN 3 SMD0.5 / TO.
  • 276 (Hermetic Package) Advantages.
  • High temperature operat.

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1N8033-GA Distributor