1N8033-GA - High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Key Features

650 V Schottky rectifier.
250 °C maximum operating temperature.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Package.
RoHS Compliant 3 1 VRRM IF (Tc=25°C) QC = 650 V = 14 A = 20 nC PIN 1 PIN 3 SMD0.5 / TO.
276 (Hermetic Package) Advantages.
High temperature operat.

1N8033-GA high temperature silicon carbide power schottky diode by GeneSiC - Datasheet Preview

Datasheet Details

Part number	1N8033-GA
Manufacturer	GeneSiC
File Size	706.12 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	1N8033-GA Datasheet

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1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant 3 1 VRRM IF (Tc=25°C) QC = 650 V = 14 A = 20 nC PIN 1 PIN 3 SMD0.