Datasheet Summary
Normally
- OFF Silicon Carbide Junction Transistor
Features
- 225°C maximum operating temperature
- Gate Oxide Free SiC Switch
- Exceptional Safe Operating Area
- Excellent Gain Linearity
- patible with 5 V TTL Gate Drive
- Temperature Independent Switching Performance
- Low Output Capacitance
- Positive Temperature Coefficient of RDS,ON
- Suitable for Connecting an Anti-parallel Diode
Advantages
- patible with Si MOSFET/IGBT Gate Drive ICs
- > 20 µs Short-Circuit Withstand Capability
- Lowest-in-class Conduction Losses
- High Circuit Efficiency
- Minimal Input Signal Distortion
- High Amplifier Bandwidth
Package
- RoHS pliant
VDS RDS(ON) ID (Tc = 25°C) hFE (Tc =...